We briefly report the optoelectronic characteristics of Schottky-type photodiode fabricated on the silicon-implanted borosilicate glass (SiO/sub 2/:Si/sup +/)-a novel nano-crystallite Si semi-conducting material. The dark current, photocurrent and breakdown voltage of the SiO/sub 2/:Si/sup +/ photodiode illuminated by Ar/sup +/ laser are measured. The effect of annealing time on the semi-conducting property of such material is characterized.


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    Title :

    Photocurrent response of Schottky diode on silicon-implanted SiO/sub 2/ substrate


    Contributors:


    Publication date :

    2001-01-01


    Size :

    160432 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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