In this paper, laser beam induced current (LBIC) has been applied to the characterization of HgCdTe n-on-p junctions fabricated through plasma induced type conversion using an inductively coupled plasma reactive ion etching (ICPRIE) tool. The nondestructive LBIC technique allows for characteristics of junctions formed under a number of different ICPRIE plasma process conditions to be investigated using only two remote contacts. This is done in order to refine the fabrication procedure which aims for controlled doping modification to produce high performance photodiodes.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Laser beam induced current characterisation of HgCdTe processed using plasma techniques


    Contributors:
    Park, B.A. (author) / Winchester, K.J. (author) / Musca, C.A. (author) / Dell, J.M. (author) / Faraone, L. (author)


    Publication date :

    2005-01-01


    Size :

    129448 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Laser Beam Induced Current Characterisation of HgCdTe Processed using Plasma Techniques

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    Evaluation of HgCdTe using laser beam induced current [2554-11]

    Arinaga, K. / Ozaki, K. / Sudo, G. et al. | British Library Conference Proceedings | 1995


    Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

    Yin, F. / Hu, W. D. / Zhang, B. et al. | British Library Online Contents | 2009


    Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

    Yin, F. / Hu, W. D. / Zhang, B. et al. | British Library Online Contents | 2009


    Study on the structural characteristics of HgCdTe photodiodes using laser beam-induced current

    Hong, X. K. / Lu, H. / Zhang, D. B. | British Library Online Contents | 2013