In this paper, we report on improved operation of a GaAsIn/GaAs multiple-quantum-well (MQW) saturable absorber as a passive mode-locker in flashlamp pumped Nd:YAG laser. The MQW structures were grown on 400 /spl mu/m thick GaAs substrate at by MBE method and were designed for use at Brewster angle inside a laser resonator. In the experiment we used element with 100 periods which have higher nonlinearity and therefore is more suitable for high power Q-switched and mode locked operation.
Cavity dumped flashlamp pumped Nd:YAG oscillator efficiently mode locked using multiple quantum well saturable absorber
2003-01-01
69218 byte
Conference paper
Electronic Resource
English
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