We present a planar large-area photoconductor based on GaAs for impulsive generation of THz radiation. The device consists of an interdigitated electrode metal-semiconductor-metal structure (MSM) with 5 /spl mu/m electrode spacing. The MSM structure is masked by an opaque metallization layer isolated from the MSM electrodes in a way that optical excitation takes place only in regions with unidirectional electric field. Constructive interference of the THz emission from accelerated carriers leads to amplitudes that are 10/sup 4/ times higher than from the same MSM structure without second metallization layer.


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    Title :

    Large-area high-power THz emitter based on interdigitated electrodes


    Contributors:
    Dreyhaupt, A. (author) / Winnerl, S. (author) / Dekorsy, T. (author) / Helm, M. (author)


    Publication date :

    2004-01-01


    Size :

    162599 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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