Taper line structure is one of the ways that can solve the reverse wave problem in distributed amplifier circuit The challenge in the design of this structure is high impedance line in the first taper section. In this paper, we propose a novel type of distributed photodetector: taper line distributed photodetector. We adopt the low temperature grown GaAs based self-align metal-semiconductor-metal traveling wave photodetector structure as the active photoabsorption region in each taper section for its high speed and high efficiency characteristics.


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    Title :

    Taper line distributed photodetector


    Contributors:


    Publication date :

    2001-01-01


    Size :

    148323 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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