A cross-correlation method for measuring the EUV pulse duration using an optical-field induced ionization process in a noble gas is performed. The duration of the 51st harmonic at 15.56 nm was measured. Time-resolved EUV absorption measurements near the L/sub II,III/ absorption edge (/spl sim/ 100 eV) of optically excited silicon is also performed using broadband picosecond EUV pulses emitted from femtosecond laser-produced plasma. A rapid change in the near-edge absorption of silicon is observed.


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    Title :

    Bright ultrafast EUV sources for time-resolved absorption measurements


    Contributors:
    Nakano, H. (author) / Oguri, K. (author) / Nishikawa, T. (author)


    Publication date :

    2004-01-01


    Size :

    112476 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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