A cross-correlation method for measuring the EUV pulse duration using an optical-field induced ionization process in a noble gas is performed. The duration of the 51st harmonic at 15.56 nm was measured. Time-resolved EUV absorption measurements near the L/sub II,III/ absorption edge (/spl sim/ 100 eV) of optically excited silicon is also performed using broadband picosecond EUV pulses emitted from femtosecond laser-produced plasma. A rapid change in the near-edge absorption of silicon is observed.
Bright ultrafast EUV sources for time-resolved absorption measurements
2004-01-01
112476 byte
Conference paper
Electronic Resource
English
Bright Ultrafast EUV Sources for Time-Resolved Absorption Measurements
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