The component (1) has semiconductor material layers arranged at an angle of preset degree relative to a longitudinal direction of the component. The component is made of semiconductor materials (2, 3) with a p-n junction, where the materials exhibit a photonic structure and a photonic bandgap. The structure is formed in a form of a Bragg stack, as two-or three-dimensional photonic crystal in a form of a bundle of photonic crystal fibers, as a periodic thin film system or as an edge filter. The Bragg stack is formed by periodic sequence of the layers with different optical refractive indices.


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    Title :

    Halbleiterbauelement mit photonischer Strukturierung sowie Verwendungsmöglichkeiten


    Contributors:
    Peters, M. (author) / Bläsi, B. (author) / Goldschmidt, J.C. (author)

    Publication date :

    2010


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    German



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