A tubular plasma processing apparatus of the present invention comprises: a first electrode having a structure in which a diamond which is a first dielectric is coated onto the surface of a conical conductor metal structure; a second electrode formed of a pipe shape that surrounds the first electrode, and made of a quartz tube which is a second dielectric; a means for fixing the first electrode to the inside of the second electrode; and an external insulating piping consisting of piping that surrounds the outside of the second electrode so as to prevent damage to the second electrode and is made of an insulating material, wherein the tubular plasma processing apparatus is characterized by a structure in which ballast water, which is a third dielectric, is introduced and made to flow into the second electrode of the quartz tube.

    La présente invention concerne un appareil tubulaire de traitement au plasma comprenant : une première électrode ayant une structure dans laquelle un diamant, qui est un premier diélectrique, est revêtu sur la surface d'une structure conductrice conique en métal ; une seconde électrode se présentant sous forme de tuyau qui entoure la première électrode, et composée d'un tube de quartz qui est un deuxième diélectrique ; un moyen destiné à fixer la première électrode à l'intérieur de la seconde électrode ; et une tuyauterie isolante externe constituée d'une tuyauterie qui entoure l'extérieur de la seconde électrode de façon à empêcher un endommagement de la seconde électrode et étant composée d'un matériau isolant, l'appareil tubulaire de traitement au plasma étant caractérisé par une structure dans laquelle de l'eau de ballast, qui est un troisième diélectrique, est introduite et amenée à s'écouler dans la seconde électrode du tube de quartz.

    본 발명의 관형 플라즈마 처리 장치는, 제1유전체인 다이아몬드가 원추형의 전도체 금속 구조물 표면에 피복된 구조를 갖는 제1전극과, 상기 제1전극을 감싸는 파이프 형상으로 이루어지고, 제2유전체인 석영관로 이루어진 제2전극과, 상기 제1전극을 상기 제2전극 내부에 고정시키는 수단과, 상기 제2전극 외부를 감싸는 배관으로 이루어져 상기 제2전극의 파손을 방지하도록 구성되고, 절연물질로 이루어진 외부 절연배관을 포함하고, 상기 석영관의 제2전극 내부로 제3유전체가 되는 평형수를 유입하여 흐르게 하는 구조로 이루어지는 것을 특징으로 한다.


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    Title :

    TUBULAR PLASMA PROCESSING APPARATUS FOR PROCESSING VESSEL BALLAST WATER


    Additional title:

    APPAREIL TUBULAIRE DE TRAITEMENT AU PLASMA DESTINÉ À TRAITER DE L'EAU DE BALLAST D'UN NAVIRE
    선박 평형수 처리 관형 플라즈마 처리 장치


    Contributors:

    Publication date :

    2020-07-16


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    Korean


    Classification :

    IPC:    B63J Hilfsanlagen auf Schiffen , AUXILIARIES ON VESSELS / B63B Schiffe oder sonstige Wasserfahrzeuge , SHIPS OR OTHER WATERBORNE VESSELS / C02F Behandlung von Wasser, Schmutzwasser, Abwasser oder von Abwasserschlamm , TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE



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