A semiconductor device includes an N-type semiconductor substrate, a first epitaxial layer, a plurality of gate trenches disposed at intervals, a first gate, a second gate, an interlayer dielectric layer, a source, and a drain. The first epitaxial layer includes a plurality of first P-type semiconductor regions. The first P-type semiconductor region is disposed below the gate trench. The first gate is filled and disposed in the gate trench. The second gate is disposed on top of the first epitaxial layer. The interlayer dielectric layer covers a side that is of the gate and that is away from the semiconductor substrate, and has contact holes that extend in a second direction. The source is disposed on a side that is of the interlayer dielectric layer and that is away from the semiconductor substrate, and is in contact with the first epitaxial layer through the contact hole.
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSION CIRCUIT, AND VEHICLE
2024-09-26
Patent
Electronic Resource
English
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