A semiconductor device of an embodiment includes a silicon carbide layer having a first plane and a second plane and includes a trench located on a first plane side and has a first region and a second region, a first silicon carbide region of an n-type, a second silicon carbide region of a p-type between the first silicon carbide region and the first plane, a third silicon carbide region of the n-type between the second silicon carbide region and the first plane, and a fourth silicon carbide region of the p-type between the second region and the first silicon carbide region; a gate electrode in the first region; a first electrode on the first plane side of the silicon carbide layer, a part of the first electrode is located in the second region and is in contact with the third and the fourth silicon carbide region; and a second electrode.
Semiconductor device, inverter circuit, driving device, vehicle, and elevator
2021-09-14
Patent
Electronic Resource
English
IPC: | H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen / B60R Fahrzeuge, Fahrzeugausstattung oder Fahrzeugteile, soweit nicht anderweitig vorgesehen , VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR / B66B Aufzüge , ELEVATORS / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen |
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