To provide a transparent electronic device capable of inhibiting crosstalk while inhibiting electrification.SOLUTION: The transparent electronic device comprises: a transparent substrate; a semiconductor element arranged pixel by pixel on the transparent substrate and having an area of 500000 μm2 or less; wiring with width of 300 μm or less, connected to the semiconductor element and arranged and extending in a first direction; and a transparent insulation layer covering the semiconductor element arranged on the transparent substrate and the wiring. A back side of the transparent electronic device is visually recognizable from a visible side. A transparent conductive layer electrically insulated fgrom the wiring and grounded is formed on the transparent insulation layer. M pixels are arrayed in the first direction and N pixels are arrayed in a second direction perpendicular to the first direction. When relative dielectric constant of the transparent insulation layer is denoted by ε, thickness of the transparent insulation layer by d[μm], and a ratio of ohmic value of the conductive layer in the first direction to ohmic value of the wiring in one pixel in the first direction by RR, RR/N/ε×d≥15 is satisfied.SELECTED DRAWING: Figure 2
【課題】帯電を抑制しつつ、クロストークの発生も抑制できる透明電子デバイス。【解決手段】透明基板と、透明基板上において画素ごとに配置され、500000μm2以下の面積を有する半導体素子と、半導体素子に接続され、第1の方向に延設された幅300μm以下の配線と、透明基板上に配置された半導体素子と配線とを覆う透明絶縁層とを備え、視認側から背面側を視認可能な透明電子デバイスである。透明絶縁層上には、透明性を有し、配線と電気的に絶縁されると共に接地された導電層が形成されており、画素は、第1の方向にM個、第1の方向と垂直な第2の方向にN個、配列されており、透明絶縁層の比誘電率をε、透明絶縁層の厚さをd[μm]、一画素における配線の第1の方向の抵抗値に対する導電層の第1の方向の抵抗値の比をRRとした場合、RR/N/ε×d≧15を満たす。【選択図】図2
TRANSPARENT ELECTRONIC DEVICE AND LAMINATED GLASS
透明電子デバイス及び合わせガラス
2024-05-15
Patent
Electronic Resource
Japanese
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