PROBLEM TO BE SOLVED: To improve the detection accuracy of a load state.SOLUTION: A semiconductor device comprises an n-type semiconductor region 32, a rear surface electrode 33, p-type base regions 34 and 35, ndiffusion layers 36 and 37, a gate insulating film 40, a gate electrode 41, and a voltage detecting circuit 24. The ndiffusion layer 36 functions as a source of an output MOS transistor 21, and the ndiffusion layer 37 functions as a source of a sense MOS transistor 22. The gate electrode 41 is provided so as to face the n-type semiconductor region 32 and the p-type base regions 34 and 35 across the gate insulating film 40. A load current Iis passed between the rear surface electrode 33 and the ndiffusion layer 36. The voltage detecting circuit 24 generates a detecting signal Sin response to the voltage between a node n1 connected to the ndiffusion layer 36 and a node n2 connected to a potential extraction electrode 43 having a potential corresponding to the potential of the rear surface electrode 33.SELECTED DRAWING: Figure 3

    【課題】負荷の状態の検出精度を向上する。【解決手段】半導体装置が、n型半導体領域32と、裏面電極33と、p型ベース領域34、35と、n+拡散層36、37と、ゲート絶縁膜40と、ゲート電極41と、電圧検出回路24とを具備する。n+拡散層36は、出力MOSトランジスタ21のソースとして機能し、n+拡散層36は、センスMOSトランジスタ22のソースとして機能する。ゲート電極41は、ゲート絶縁膜40を挟んでn型半導体領域32、p型ベース領域34、35と対向するように設けられている。負荷電流IOUTは、裏面電極33とn+拡散層36との間で流される。電圧検出回路24は、n+拡散層36に接続されたノードn1と、裏面電極33の電位に対応する電位を有する電位取出電極43に接続されたノードn2との間の電圧に応答して検出信号SDETを生成する。【選択図】図3


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    Title :

    SEMICONDUCTOR DEVICE


    Additional title:

    半導体装置


    Contributors:

    Publication date :

    2018-07-05


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    Japanese


    Classification :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B60R Fahrzeuge, Fahrzeugausstattung oder Fahrzeugteile, soweit nicht anderweitig vorgesehen , VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR



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