The invention relates to a dual-node tolerant anti-radiation latch circuit, a memory and an aircraft, and the dual-node tolerant anti-radiation latch circuit comprises a memory module; and the storage module comprises eight NMOS (N-channel Metal Oxide Semiconductor) tubes and eight PMOS (P-channel Metal Oxide Wherein the third storage node is surrounded by a first NMOS tube and a third NMOS tube to form an N-polarity reinforcing structure, and the fourth storage node is surrounded by a second NMOS tube and a fourth NMOS tube to form an N-polarity reinforcing structure, so that the number of non-sensitive nodes is reduced; meanwhile, the fifth storage node is surrounded by the first PMOS tube and the seventh PMOS tube to form a P polarity reinforcing structure, the sixth storage node is surrounded by the second NMOS tube and the eighth NMOS tube to form a P polarity reinforcing structure, and the number of non-sensitive nodes is also reduced. Therefore, the anti-radiation latch circuit provided by the invention has double-node tolerance capability, can resist the influence of the cosmic radiation environment to a certain extent, and solves the problem that a storage circuit in an existing aircraft is easily influenced by the cosmic radiation environment.
本申请涉及一种双节点容忍的抗辐射锁存器电路、存储器和航空器,其中,该双节点容忍的抗辐射锁存器电路包括:存储模块;存储模块包括八个NMOS管和八个PMOS管。其中,第三存储节点通过第一NMOS管、第三NMOS管包围形成N极性加固结构,第四存储节点通过第二NMOS管、第四NMOS管形成N极性加固结构,减少了非敏感节点的数目;同时,第五存储节点通过第一PMOS管、第七PMOS管包围形成P极性加固结构,第六存储节点通过第二NMOS管、第八NMOS管包围形成P极性加固结构,也同样减少了非敏感节点的数目。因此,本发明提供的抗辐射锁存器电路具有双节点容忍能力,在一定程度上能够抵抗宇宙辐射环境影响,解决了现有航空器中的存储电路容易受到宇宙辐射环境影响的问题。
Dual-node tolerant anti-radiation latch circuit, memory and aircraft
双节点容忍的抗辐射锁存器电路、存储器和航空器
2024-04-16
Patent
Electronic Resource
Chinese
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