A super-junction reverse-conducting insulated gate bipolar transistor and an electric vehicle motor control unit. The super-junction reverse-conducting insulated gate bipolar transistor comprises: an N-type buffer layer (10); a super-junction structural layer (20) formed on a first main face of the N-type buffer layer (10), wherein the super-junction structural layer (20) comprises P-type drift regions (201) and N-type drift regions (202) which are alternately arranged in a first direction (a); a front device formed on the super-junction structural layer (20); a collector layer (100) formed on a second main face of the N-type buffer layer (10), wherein the collector layer (100) comprises a P+ collector (1001) and an N+ collector (1002) which are alternately arranged in the first direction (a); and a collector electrode layer (110) formed on the collector layer (100), wherein in the super-junction structural layer (20), a first region (S1) is formed in a region part corresponding to the N+ collector (1002), a second region (S2) is formed in a region part corresponding to the P+ collector (1001), and in a second direction (b), and each drift region length (L1) in the first region (S1) is unequal to each drift region length (L2) in the second region (S2), so as to increase the time of the motor control unit in a MOSFET mode when same works in a light-load state and to improve the conversion efficiency of the MCU.
一种超结逆导型绝缘栅双极晶体管及电动汽车电极控制器,超结逆导型绝缘栅双极晶体管包括:N型缓冲层(10);形成于N型缓冲层(10)第一主面上的超结结构层(20),超结结构层(20)包括沿第一方向(a)交替排列的P型漂移区(201)和N型漂移区(202);形成于超结结构层(20)上的正面器件;形成于N型缓冲层(10)第二主面上的集电极层(100),集电极层(100)包括沿第一方向(a)交替排列的P+集电极(1001)和N+集电极(1002);形成于集电极层(100)上的集电极电极层(110);超结结构层(20)内:对应N+集电极(1002)区域部分形成第一区域(S1),对应P+集电极(1001)区域部分形成第二区域(S2),且沿第二方向(b),第一区域(S1)内每个漂移区长度(L1)与第二区域(S2)内每个漂移区长度(L2)不相等,以延长电极控制器工作在轻载状态时处于MOSFET模式时间,提升MCU的转换效率。
SUPER-JUNCTION REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND ELECTRIC VEHICLE MOTOR CONTROL UNIT
一种超结逆导型绝缘栅双极晶体管及电动汽车电极控制器
2022-02-25
Patent
Electronic Resource
Chinese
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