Compensated silicon, carrier lifetime, boron-oxygen defect. - Kompensiertes Silicium, Ladungsträgerlebensdauer, Bor-Sauerstoff-Defekt
Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation
2012
VII, 119 S.
graph. Darst.
Theses
English
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
TIBKAT | 2012
|Oxygen-related centers in multicrystalline silicon
Online Contents | 2000
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