Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Density functional theories study on optoelectronic properties of arsenic-doped GaN nanowires


    Contributors:
    Zhang, Y. (author) / Cui, Z. (author) / Ding, Y. (author) / Liu, T. (author)

    Published in:

    Publication date :

    2016-01-01


    Size :

    11 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English


    Classification :

    DDC:    537.5



    Optoelectronic properties of Mg doping GaN nanowires

    Kong, Y. / Liu, L. / Xia, S. et al. | British Library Online Contents | 2016



    Integrated Optoelectronic Devices using Compound Semiconductor Nanowires

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    Influences of Mg doping and N vacancy on the optoelectronic properties of GaN nanowires

    Xia, S. H. / Liu, L. / Kong, Y. et al. | British Library Online Contents | 2016