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    Title :

    Epitaxial growth of GaN on Si (100)/(sapphire (0001) using RF plasma-assisted ionized source beam expitaxy


    Contributors:
    Yoo, M. C. (author) / Kim, T. I. (author) / Kim, K. (author) / Shim, K. H. (author)


    Publication date :

    1995-01-01


    Size :

    427 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    Unknown


    Classification :

    DDC:    537.5



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