Laser Assisted Molecular Beam Epitaxy (LAMBE) of Compound Semiconductor Buffer Layers and AlN, GaN Structures for High Electron Mobility Transistor
Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia
2002-01-01
4 pages
IEEE cat no 02EX601
Conference paper
English
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The humble representation of Samuel Lambe of London, merchant
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