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    Title :

    4-mum negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180^oC [4355-23]



    Conference:

    International conference; 5th, Material science and material properties for infrared optoelectronics ; 2000 ; Kiev, Ukraine



    Publication date :

    2001-01-01


    Size :

    7 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 4355

    DataCite | 1929


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    Heterostructure HgCdTe photovoltaic detectors [4355-01]

    Rogalski, A. / SPIE- The International Society for Optical Engineering / National Academy of Sciences of Ukraine | British Library Conference Proceedings | 2001


    Photosensitivity of porous-silicon-based heterostructures [4355-10]

    Monastyrskii, L. S. / Savchyn, V. P. / Parandi, P. P. et al. | British Library Conference Proceedings | 2001


    Spectral responsivity of HgMnTe photodiodes [4355-15]

    Sun, W. / Rarenko, I. M. / Ostapov, S. E. et al. | British Library Conference Proceedings | 2001