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    Title :

    Fabrication details of GaInAsSb-based photodiode heterostructures [4340-35]



    Conference:

    International conference; 16th, Photoelectronics and night-vision devices ; 2000 ; Moscow



    Publication date :

    2000-01-01


    Size :

    10 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Analytical calculation of dark voltage-current characteristics of double-layer heterojunction photodiode [4340-13]

    Sokolovsky, B. S. / Pysarevsky, V. K. / Russian Federation RD & P Centre ORION | British Library Conference Proceedings | 2000


    Nr. 4340

    DataCite | 1928



    Femtosecond photoelectronics [4340-25]

    Prokhorov, A. M. / Schelev, M. Y. / Russian Federation RD & P Centre ORION | British Library Conference Proceedings | 2000


    Laser-spectroscopic distance meter on the basis of a tunable injection laser and germanium photodiode (Lambda=764 nm) [4340-43]

    Britov, A. D. / Dirochka, A. I. / Nadezhdinskii, A. I. et al. | British Library Conference Proceedings | 2000