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    Title :

    Recombination current for p-i-n junctions based on compensated semiconductor materials [3890-23]



    Conference:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Publication date :

    1999-01-01


    Size :

    6 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Photoresponse in nonuniform semiconductor junctions under infrared laser excitation [3890-21]

    Asmontas, S. P. / Gradauskas, J. / Seliuta, D. et al. | British Library Conference Proceedings | 1999


    Nr. 3890

    DataCite | 1920


    Influence of semiconductor structure inhomogeneity on electrophysical measurement results [3890-53]

    Savitsky, V. G. / Vlasov, A. / Nemolovsky, A. V. et al. | British Library Conference Proceedings | 1999


    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-36]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999


    Influence of radiation defects on the heterogeneity distribution and radiant recombination of GaP [3890-89]

    Tartachnik, V. P. / Gontaruk, O. M. / Korbutiak, D. V. et al. | British Library Conference Proceedings | 1999