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    Title :

    Highly reliable 40-W cw InGaAlAs/GaAs 808-nm laser bars [3628-09]



    Conference:

    Conference, In-plane semiconductor lasers III ; 1999 ; San Jose; CA



    Publication date :

    1999-01-01


    Size :

    7 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    200-W InGaAlAs/GaAs diode laser bars for pumping [3889-124]

    Acklin, B. D. / Behringer, M. / Herrmann, G. et al. | British Library Conference Proceedings | 2000


    Nr. 3628

    DataCite | 1915


    Aluminum-free active-area laser bars at 790- to 830-nm wavelengths (Invited Paper) [3628-02]

    Asonen, H. M. / Aarik, J. / Bournes, P. A. et al. | British Library Conference Proceedings | 1999


    Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures [3628-14]

    Golombek, A. / Goldhahn, R. / Gobsch, G. et al. | British Library Conference Proceedings | 1999


    Comparison of mid-infrared laser diode active regions [3628-35]

    Olesberg, J. T. / Flatte, M. E. / Brown, B. J. et al. | British Library Conference Proceedings | 1999