Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low Frequency Electrical Noise Characteristics of Broad Area 808nm Semiconductor Laser Diodes



    Conference:

    Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA



    Publication date :

    1997-01-01


    Size :

    2 pages


    Remarks:

    Described as proceedings. IEEE cat no: 97CH36057




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





    New 808nm High Power Laser Diode Pump Module for Space Applications

    Schwander, T. / European Space Agency / Centre Nationale d'Etudes Spatiales | British Library Conference Proceedings | 2006


    Temperature characteristic of 808nm VCSELs with large aperture

    Feng, Yuan / Feng, Dawei / Hao, Yongqin et al. | SPIE | 2015



    High-power AlInGaAs/GaAs double and triple microstack lasers at 808nm

    IEEE | British Library Conference Proceedings | 1999