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    Title :

    Observation of the new lines in photoluminescence from MOCVD-grown GaAs [3179-24]



    Conference:

    Symposium; 12th, Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 1996 ; Zakopane; Poland



    Publication date :

    1996-01-01


    Size :

    4 pages


    Remarks:

    Also known as SSCs'96




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]

    Ciorga, M. / Bryja, L. / Misiewicz, J. et al. | British Library Conference Proceedings | 1996


    Photoreflectance and photoluminescence of InGaAs/GaAs structures [3179-22]

    Misiewicz, J. / Ciorga, M. / Sek, G. et al. | British Library Conference Proceedings | 1996


    Nr. 3179

    DataCite | 1906


    Optical properties of Zn~xMg~1~-~xSe/GaAs heterojunctions grown by MBE [3179-26]

    Bala, W. / Glowacki, G. / Gapinski, A. et al. | British Library Conference Proceedings | 1996


    InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]

    Rutkowski, J. / Raczynska, J. / Rogalski, A. et al. | British Library Conference Proceedings | 1996