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    Title :

    1.3- and 1.55-m InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence [2891-537]



    Conference:

    Conference, Integrated optoelectronics ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    3 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    High-performance 1.3- and 1.55-m InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD (Invited Paper) [2891-522]

    Ma, X. / Wang, S. / Xiong, F. et al. | British Library Conference Proceedings | 1996


    Reflectivity from multiple quantum well modulator with contrast ratio of 22:1 at 1.55 m [2891-563]

    Cunningham, J. E. / Ford, J. E. / Jan, W. Y. et al. | British Library Conference Proceedings | 1996


    Nr. 2891

    DataCite | 1900


    High-power, narrow-beam, antiguided 1.55-/spl um/m InGaAsP/InP diode laser arrays

    Bhattacharya, A. / Mawst, L.J. / Botez, D. | IEEE | 1997


    Photonic integrated circuits and components using quantum well intermixing [2891-501]

    He, J.-J. / Koteles, E. S. / Poole, P. J. et al. | British Library Conference Proceedings | 1996