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    Title :

    Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing [2886-539]



    Conference:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    4 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    0.808-m InGaAsP/GaAs SCH lasers [2886-566]

    Zhu, B. / Zhang, X. / Bo, B. et al. | British Library Conference Proceedings | 1996


    Intersubband lasing in silicon-based multiple quantum wells [2886-502]

    Sun, G. / Khurgin, J. B. / Friedman, L. R. et al. | British Library Conference Proceedings | 1996


    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]

    An, H. / Yang, S. / Sun, H. et al. | British Library Conference Proceedings | 1996


    Nr. 2886

    DataCite | 1900


    LPE growth of high-power InGaAsP/GaAs SCH SQW lasers [2886-547]

    Bo, B. / Zhang, B. / Zhu, B. et al. | British Library Conference Proceedings | 1996