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    Title :

    High-power laser diodes at wavelength 1.06 m grown by MOCVD [2683-21]



    Conference:

    Conference, Fabrication, testing, and reliability of semiconductor lasers ; 1996 ; San Jose; CA



    Publication date :

    1996-01-01


    Size :

    7 pages


    Remarks:

    Held as part of the SPIE OE/LASE '96 Symposium




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 2683

    DataCite | 1896


    Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells [2683-01]

    Sun, D. / Beernink, K. J. / Thornton, R. L. et al. | British Library Conference Proceedings | 1996


    Optical mirror facet strength of cw-operated separate confinement heterostructure laser diodes [2683-22]

    Katsavets, N. I. / Livshits, D. A. / Tarasov, I. S. et al. | British Library Conference Proceedings | 1996


    Plastic-molded package of AlGaInP laser apparatus [2683-07]

    Chen, H. N. / Hwang, R. Y. / Hsu, J. T. et al. | British Library Conference Proceedings | 1996


    Reliability of carbon doped MOCVD grown InGaAs/AlGaAs high power laser diodes

    Bulaev, P.V. / Marmalyuk, A.A. / Padalitsa, A.A. et al. | IEEE | 2003