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1–12 von 12 Ergebnissen
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    Wideband polarization insensitivity quantum dot optical amplifier

    Kita, T. / Jayavel, P. / Tanaka, H. et al. | IEEE | 2003
    Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization ...

    Ultrafast nonlinear processes in quantum-dot optical amplifiers

    Akiyama, T. / Kuwatsuka, H. / Simoyama, T. et al. | British Library Online Contents | 2001

    Low frequency chirp self-assembled InGaAs/GaAs quantum dot lasers

    Hatori, N. / Sugawara, M. / Akiyama, T. et al. | IEEE | 2001
    We measured and compared frequency chirp between a quantum dot laser and a quantum well laser. The chirp of the quantum dot laser was below ...

    Quantum-dot semiconductor optical amplifiers for high bit-rate signal processing over 40 Gbit/s

    Sugawara, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2001
    We theoretically demonstrate that semiconductor optical amplifiers with self-assembled quantum dots can process high bit-rate optical ...

      Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing Over 40 Gbit/s

      Sugawara, M. / Hatori, N. / Akiyama, T. et al. | British Library Conference Proceedings | 2001

    Carrier dynamics in self-assembled InGaAs/GaAs quantum dots and their application to optical devices

    Sugawara, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2001
    This talk provides following topics on our research of self-assembled InGaAs/GaAs quantum dots: 1) carrier dynamics and optical gain, 2 ...

      Carrier Dynamics in Self-Assembled InGaAs/GaAs Quantum Dots and Their Application to Optical Devices

      Sugawara, M. / Hatori, N. / Akiyama, T. et al. | British Library Conference Proceedings | 2001

    Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm

    Sugawara, M. / Otsubo, K. / Yamamoto, T. et al. | IEEE | 2005
    Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability ...

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | British Library Conference Proceedings | 2003

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | IEEE | 2003
    We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic ...

    Design of high-speed directly-modulated self-assembled quantum-dot lasers aiming at 40 Gb/s operation: experiments and model

    Ishida, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2004
    Modulation characteristics of 1.3 /spl mu/m quantum-dot lasers were investigated experimentally and theoretically to evaluate the K-factor ...

    Low threshold (8 mA) 1.3-/spl mu/m CW lasing of InGaAs/InAs quantum dots at room temperature

    Mukai, K. / Nakata, Y. / Otsubo, K. et al. | IEEE | 1999
    Low threshold 1.3-/spl mu/m CW lasing of self-assembled InGaAs/GaAs quantum dots at 25/spl deg/C is presented. The developed multiplied ...

    Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer

    Shoji, H. / Nakata, Y. / Mukai, K. et al. | IEEE | 1996
    Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband ...