Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb/s laser diodes at 1.3 μm.
Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm
2005-01-01
192002 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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