Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb/s laser diodes at 1.3 μm.


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    Titel :

    Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm


    Beteiligte:
    Sugawara, M. (Autor:in) / Otsubo, K. (Autor:in) / Yamamoto, T. (Autor:in) / Hatori, N. (Autor:in) / Ishida, M. (Autor:in) / Ebe, H. (Autor:in) / Nakata, Y. (Autor:in) / Arakawa, Y. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    192002 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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