Low threshold 1.3-/spl mu/m CW lasing of self-assembled InGaAs/GaAs quantum dots at 25/spl deg/C is presented. The developed multiplied high-density dot layers enabled us to achieve the threshold current 8 mA.
Low threshold (8 mA) 1.3-/spl mu/m CW lasing of InGaAs/InAs quantum dots at room temperature
1999-01-01
135868 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
|Columnar dots achieve low-threshold lasing
British Library Online Contents | 1998
Room Temperature Electroluminescence at 1.3mum from Strained InAs/GaAs Quantum Dots
British Library Conference Proceedings | 1999
|