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    1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design

    Deubert, S. / Krebs, R. / Reithmaier, J.P. et al. | IEEE | 2003
    This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design ...

    1.3/spl mu/m electroluminescence from MOCVD-grown quantum dots

    Wong, P.S. / Xin, Y. / Birudavolu, S. et al. | IEEE | 2003

    1.3 /spl mu/m high density quantum dot laser with short cavity and cleaved facet

    Amano, T. / Sugaya, T. / Komori, K. | IEEE | 2005
    This paper reports the characteristics of a high density quantum dot (QD) laser. This work demonstrates beyond 1.3-/spl mu/m wavelength ...

    1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

    Mao, M.-H. / Wu, T.-Y. / Chang, F.-Y. et al. | IEEE | 2003
    In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation ...

    1.3μm Quantum Dot Self-Aligned Stripe Laser

    Groom, K. M. / Assamoi, P. J. / Hugues, M. et al. | IEEE | 2008
    We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at ...

    1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

    Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004
    This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...

    1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers

    Balakrishnan, G. / Dawson, L.R. / Huffaker, D.L. et al. | IEEE | 2003
    We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state ...

    2-D photonic crystal microcavities

    Scherer, A. / Yoshie, T. / Loncar, M. et al. | IEEE | 2003
    We have recently developed photonic crystal nanocavities and lasers from both InGaAsP quantum well and InGaAs/GaAs quantum dot materials ...

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    20 GHz colliding pulse mode-locking of InGaAs quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IEEE | 2005
    Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7 ps, 20 GHz pulses are ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 /spl mu/m

    Tan, W.K. / Bryce, A.C. / Marsh, J.H. et al. | IEEE | 2004
    35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 /spl mu/m is reported for the first ...

    100-nm quantum dot waveguides by two-layer self-assembly

    Chia-Jean Wang, / Lin, L.Y. / Parviz, B.A. | IEEE | 2005
    We demonstrate for the first time fabrication of 100 nm and 500 nm quantum dot waveguides, whose design relies on stimulated emission to ...

    1300 nm on gallium arsenide: quantum dots vs GaInNAs

    Fiore, A. / Markus, A. / Chen, J.X. et al. | IEEE | 2002
    quantum dots (QDs). By directly comparing the radiative properties of identical structures comprising QDs and GaInNAs QWs, we evidence the ...

    2004 IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581)

    IEEE | 2004
    program; polarization mode dispersion; microfluidic devices; quantum dot materials and devices; hardware for optical communications; sensor ...

    2005 IEEE LEOS Annual Meeting

    IEEE | 2005
    The following topics are dealt with: careers in optical engineering optoelectronics research; lasers in remote sensing; quantum dots ...

    Absence of filamentation in quantum-dot lasers. Theory and experiment

    Chow, W.W. / Schneider, H.C. / Pearce, E.J. et al. | IEEE | 2002
    We theoretically and experimentally investigate the lateral mode behavior of quantum-dot lasers, and demonstrate the absence of ...

    A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures

    Pearce, E.J. / Smowton, P.M. / Summers, H.D. et al. | IEEE | 2003
    Carrier distributions in DWELL (quantum dot within a quantum well) and standard quantum dot (QD) lasers are similar but radiative ...

    Active Mode-Locking of Quantum Dot Fabry-Perot Laser Diode

    Shen, A. / van Dijk, F. / Renaudier, J. et al. | IEEE | 2006