Application of power MOSFETs in spaceborne power converters was simulated by exposing switched devices to low-dose-rate ionizing radiation. Both radiation-hardened and nonradiation-hardened devices were tested. The results were compared to those obtained at higher dose rates and with constant gate bias. The primary effects of ionizing radiation on power MOSFETs are changes in the threshold voltage and degradation of mobility. These effects result in slower switching speeds and reduced drive capability. Both threshold shift and mobility degradation were found to depend on bias conditions and dose rate. Therefore, to predict device behavior, both the radiation environment and the operating conditions must be taken into account.


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    Titel :

    Simulated space radiation effects on power MOSFETs in switching power supplies


    Weitere Titelangaben:

    Simulierte Raumstrahlungseffekte auf Leistungs-MOSFETs in Schaltnetzteilen


    Beteiligte:
    Wahle, P.J. (Autor:in) / Schrimpf, R.D. (Autor:in) / Galloway, K.F. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1990


    Format / Umfang :

    5 Seiten, 13 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




    Simulated space radiation effects on power MOSFETs in switching power supplies

    Wahle, P.J. / Schrimpf, R.D. / Galloway, K.F. | Tema Archiv | 1989




    Microelectronic Space Power Supplies

    Hepp, A. F. / Bailey, S. G. / Landis, G. A. et al. | British Library Conference Proceedings | 2002