When space satellite applications (non-strategic) of silicon power MOSFETs are considered, the designer must bear in mind that an Earth synchronous satellite will accumulate an extremely high radiation dose in the expected 5 to 10 year lifetime of these vehicles. Although the outer skin of the spacecraft, local enclosures and packaging and adjacent components will all provide some shielding, a total dose in the range 105 rads can easily be accumulated in some orbits. If the switched mode power supply is obtaining its primary or input power from solar cells then these will be unprotected and the MOSFET will not need to be more radiation tolerant than those devices.


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    Titel :

    Radiation tolerance of power MOSFETs in space applications


    Weitere Titelangaben:

    Strahlungstoleranz von Leistungs-MOSFETs bei Raumfahrt-Anwendungen


    Beteiligte:
    Warriner, M. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1982


    Format / Umfang :

    4 Seiten, 3 Quellen


    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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