The application of power MOSFETs in spaceborne power converters was simulated by exposing switched devices to low-dose-rate ionizing radiation. Both radiation-hardened and nonradiation-hardened devices were tested. The results were compared to those obtained at higher dose rates and with constant gate bias. The primary effects of ionizing radiation on power MOSFETs are changes in the threshold voltage and degradation of mobility. These effects result in slower switching speeds and reduced drive capability. Both threshold shift and mobility degradation were found to depend on bias conditions and dose rate. Therefore, in order to predict device behavior, both the radiation environment and operating conditions must be taken into account.


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    Titel :

    Simulated space radiation effects on power MOSFETs in switching power supplies


    Weitere Titelangaben:

    Simulierte Strahlungsschäden an Leistungs-MOS-FETs in Schaltnetzteilen


    Beteiligte:
    Wahle, P.J. (Autor:in) / Schrimpf, R.D. (Autor:in) / Galloway, K.F. (Autor:in)


    Erscheinungsdatum :

    1989


    Format / Umfang :

    6 Seiten, 13 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Simulated space radiation effects on power MOSFETs in switching power supplies

    Wahle, P.J. / Schrimpf, R.D. / Galloway, K.F. | Tema Archiv | 1990



    Microelectronic Space Power Supplies

    Hepp, A. F. / Bailey, S. G. / Landis, G. A. et al. | British Library Conference Proceedings | 2002


    Microelectronic space power supplies

    Raffaelle, R.P. / Landis, G.A. / Bailey, S.G. et al. | Tema Archiv | 2002