Results of an investigation into the survivability of power MOSFETs in space are reported. 72 of these devices are presently in geosynchronous orbit aboard six communications spacecraft, and operating at 70 V, which is 70% of the nominal breakdown voltage. No failures have occurred after 94536 device-days in space. The irradiation of discrete parts as well as the prototype flight power converter, containing the same part types, by iron particles, with a LET (linear energy transfer) of 10 MeV-cm2mg, and an iron spectrum with a maximum LET of 26 showed these high-reliability flight parts to be relatively harder than the same type of devices previously ground tested. This appears to be the explanation for the lack of failures in space.


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    Titel :

    SEU sensitivity of power converters with MOSFETs in space


    Weitere Titelangaben:

    Empfindlichkeit von Leistungs-Umformern mit MOS-FETs gegenueber Strahlungseinwirkungen in der Raumfahrt


    Beteiligte:
    Brucker, G.J. (Autor:in) / Measel, P. (Autor:in) / Oberg, P. (Autor:in) / Wert, J. (Autor:in) / Criswell, T. (Autor:in)

    Erschienen in:

    IEEE Transactions on Nuclear Science ; NS-34 , 6, PT.1 ; 1792-1795


    Erscheinungsdatum :

    1987


    Format / Umfang :

    4 Seiten, 4 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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