Changes in technology and device scaling have generally increased the sensitivity of VLSI devices to latchup from single interactions of heavy particles in space. Here the latchup mechanisms are discussed, comparing latchup from heavy particles in space with electrically induced latchup, which has been more widely studied. The effects of technology changes and device scaling on latchup susceptibility are discussed as well. Test methods and the interpretation of latchup results are also included, along with predictions of the effects of device evolution and scaling on latchup susceptibility in space.
The influence of VLSI technology evolution on radiation-induced latchup in space systems
Der Einfluß der VLSI-Technikentwicklung auf die strahlungsinduzierte Blockierung in Raumfahrtsystemen
IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 505-521
1996
17 Seiten, 16 Bilder, 1 Tabelle, 69 Quellen
Aufsatz (Zeitschrift)
Englisch
VLSI-Schaltung , Strahlungsbelastung , Strahlungsfestigkeit , Raumfahrt , Raumfahrzeug , Miniaturisierung , Vorhersage , Submikrometerbereich , energiereiches Teilchen , schweres Ion , CMOS-Technik , Strom-Spannungs-Kennlinie , Modellsimulation , ionisierende Strahlung , Teilchenstrahlung , Temperaturgang , Trigger , Substrat , Layout , Gate-Oxid , SOI-Technik
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