A variety of power device structures have now been fabricated in 6H-SiC, showing promise for both DC and RF operation. All of these devices have the ability to operate at high temperatures, which is a major advantage for aerospace systems because the heat sink surface area required to cool these devices decreases as a T4 function. For the rectifiers, power MOSFETs, BJTs and thyristors in 6H-SiC, the level of doping required for a given voltage is much higher than in Si and the layer thickness is about 1/10th that required for Si. This will result in dramatically lower on-resistances for SiC power devices of equivalent size, or dramatically smaller SiC device sizes for the same on-resistance. This has already been proven by obtaining specific on-resistances for 1400 V 6H-SiC drift regions that are 1/55th of the lowest value Si drift regions should be able to achieve. Although there is much room for improvement in these devices, the results presented in this paper verify the potential for 6H-SiC for aerospace power applications.


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    Titel :

    6H-silicon carbide power devices for aerospace applications


    Weitere Titelangaben:

    6H-SiC-Leistungsbauelemente für Anwendungen in der Luftfahrt


    Beteiligte:
    Palmour, J.W. (Autor:in) / Edmont, J.A. (Autor:in) / Kong, Hua-Shuang (Autor:in) / Carter, C.H. jun. (Autor:in)


    Erscheinungsdatum :

    1993


    Format / Umfang :

    6 Seiten, 10 Bilder, Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch





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