New material technologies such as Silicon Carbide (SiC) are promising in the development of compact high-power converters for next generation aerospace power electronics applications. This paper presents an optimized converter design approach that takes into consideration non-linear interactions among various converter components, source and load. A 50% improvement in converter power density is calculated for a 100 V-2 kV, 7 kW SiC DC-DC power converter operating at 150/spl deg/C as compared to a silicon power converter. Experimental results of hard- and soft-switched SiC power converters using commercial Schottky and PiN diodes and JFET's are reported at lower power levels.
Silicon carbide power converters for next generation aerospace electronics applications
01.01.2000
669776 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Silicon Carbide (SiC) Power Converters for Next Generation Aerospace Electronics Applications
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