This paper describes the characterization and modeling of the performance and reliability of SiC devices. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. It will also result in a comprehensive physics-based defect model, a high-voltage diode behavioral circuit model, and improved edge-termination and passivation techniques. This paper shows initial results of experimental determination and modeling of the role of material defects and surface passivation on 100-V diode breakdown and electrical performance. The devices are subjected to dynamic stresses typical of switching applications to determine the dynamic SOA and avalanche rating of the devices.
Silicon carbide power electronics for high temperature applications
2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484) ; 5 ; 431-437 vol.5
2000-01-01
755331 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Silicon Carbide Power Electronics for High Temperature Applications
British Library Conference Proceedings | 2000
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