This paper describes the characterization and modeling of the performance and reliability of SiC devices. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. It will also result in a comprehensive physics-based defect model, a high-voltage diode behavioral circuit model, and improved edge-termination and passivation techniques. This paper shows initial results of experimental determination and modeling of the role of material defects and surface passivation on 100-V diode breakdown and electrical performance. The devices are subjected to dynamic stresses typical of switching applications to determine the dynamic SOA and avalanche rating of the devices.


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    Titel :

    Silicon carbide power electronics for high temperature applications


    Beteiligte:
    Shenai, K. (Autor:in) / Trivedi, M. (Autor:in)


    Erscheinungsdatum :

    2000-01-01


    Format / Umfang :

    755331 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Silicon Carbide Power Electronics for High Temperature Applications

    Shenai, K. / Trivedi, M. / Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2000


    Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

    Hornberger, J. / Lostetter, A.B. / Olejniczak, K.J. et al. | IEEE | 2004


    Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

    Hornberger, J. / Lostetter, A.B. / Olejniczak, K.J. et al. | Tema Archiv | 2004