The SiC Junction Field Effect Transistor (JFET) technology has continued to mature, allowing for a wider range of product offerings that are expected to play an important role in the future aerospace and hybrid vehicle system designs. This paper will give an overview of vertical trench SiC JFET technology detailing the high-temperature dc characteristics of the discrete devices also show power module switching behavior up to 100A. Additional characterization of the all-SiC power modules used as solid-state circuit breakers will be given.


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    Titel :

    Silicon Carbide Power Electronics for High-Temperature Power Conversion and Solid-State Circuit Protection in Aircraft Applications


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:

    Kongress:

    Aerospace Technology Conference and Exposition ; 2011



    Erscheinungsdatum :

    2011-10-18




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Silicon Carbide Power Electronics for High Temperature Applications

    Shenai, K. / Trivedi, M. / Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2000



    Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

    Hornberger, J. / Lostetter, A.B. / Olejniczak, K.J. et al. | IEEE | 2004


    Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

    Hornberger, J. / Lostetter, A.B. / Olejniczak, K.J. et al. | Tema Archiv | 2004