With the extended use of Solid State Technology in power amplifiers for space application, reliability of such components must be perfectly known and specific care must be taken to ensure long life. Life curve and objectives, failure mechanism will be presented. First the different types of screening will be presented and discussed. Then the influence of development and process of the transistors on one side, and the conditions of use (electrical and mechanical) on the other side will be reviewed. At last the phenomenon of end of life will be presented. All these informations are related to test results up to 20.000 hours of real test and more than 10 years of experience in the microwave field, for space application amongst other. Keywords: Solid State, amplifer, reliability, screening and transistors.


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    Titel :

    Reliability of microwave bipolar silicon transistors


    Weitere Titelangaben:

    Zuverlässigkeit von Mikrowellenbipolartransistoren aus Silicium


    Beteiligte:
    Bobin, G. (Autor:in) / Lemenager, J.M. (Autor:in)


    Erscheinungsdatum :

    1991


    Format / Umfang :

    6 Seiten, 2 Bilder, 7 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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