Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 micrometer SiGe-BiCMOS process with an fT of 70 GHz.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Silicon-germanium for phased array radars


    Beteiligte:
    Berg, H. (Autor:in) / Thiesies, H. (Autor:in) / Hemmendorff, E. (Autor:in) / Sidiropoulos, G. (Autor:in) / Hedman, J. (Autor:in)


    Erscheinungsdatum :

    2008


    Format / Umfang :

    4 Seiten, 5 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Adaptive Beamforming for Phased Array Radars

    Nickel, U. | Online Contents | 1998


    CONTINUOUSLY STEERING PHASED ARRAY AND HEADLIGHT RADARS

    SHAMS SOREN | Europäisches Patentamt | 2022

    Freier Zugriff

    An interlaced phased array antenna for atmospheric radars

    Janardhanan, K. V. | Online Contents | 2001



    A conformal conical phased array antenna for modern radars

    Aboul-Seoud, Ahmed K. / Hafez, AlaaEl-Din S. / Hamed, Ahmed M. et al. | IEEE | 2014