Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 micrometer SiGe-BiCMOS process with an fT of 70 GHz.
Silicon-germanium for phased array radars
2008
4 Seiten, 5 Quellen
Aufsatz (Konferenz)
Englisch
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