Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 micrometer SiGe-BiCMOS process with an fT of 70 GHz.


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    Titel :

    Silicon-germanium for phased array radars


    Beteiligte:
    Berg, H. (Autor:in) / Thiesies, H. (Autor:in) / Hemmendorff, E. (Autor:in) / Sidiropoulos, G. (Autor:in) / Hedman, J. (Autor:in)


    Erscheinungsdatum :

    2008


    Format / Umfang :

    4 Seiten, 5 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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