In an effort to design fully radiation-hardened memories for satellite and deep space applications, a 16K and a 2K CMOS static RAM were modeled for single-particle upset during the design stage. The modeling resulted in the addition of feedback resistors in the 16K, while the 2K remained tentatively unaltered. Subsequent experiments, using the Lawrence Berkeley Laboratories' 88-inch cyclotron to accelerate krypton and oxygen ions, established an upset threshold for the 2K and the 16K without resistance added as well as a hardening threshold for the 16K with feedback resistance added. Results for the 16K showed it to be hardenable to a higher level than previously published data for other unhardened 16K RAMs.


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    Titel :

    Comparison of analytical models and experimental results for single event upset in CMOS SRAMs


    Weitere Titelangaben:

    Vergleich der analytischen Modelle und der experimentellen Ergebnisse fuer Einzelkippvorgaenge in CMOS SRAMs


    Beteiligte:
    Mnich, T.M. (Autor:in) / Diehl, S.E. (Autor:in) / Shafer, B.D. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1983


    Format / Umfang :

    4 Seiten, 5 Bilder, 3 Tabellen, 8 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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