Dynamic 16K random access memories (RAMs) have been irradiated with neutrons having mean energies of 6.5, 9 and 14 MeV and with 32 MeV protons and have been found to undergo single event upset. For both particles, one upset is expected for approximately 10 8 paricles/cm (exp2). The upset are statistical and the affected cells can be reset and continue normal operation. Both HIGH and LOW storage elements are upset though at different rates. The cause of the upsets is most probably a multi - MeV alpha particle created by an (n, alpha) or (p, alpha) or similar nuclear reaction. The alpha particle discharges either the storage capacitor, the floating bit line, or the reference capacitor used by the sense amplifier.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Single event upset of dynamic RAMs by neutrons protons


    Weitere Titelangaben:

    Einzelereignis Wechsel bei dynamischen RAM's bei Neutronen und Protonen


    Beteiligte:
    Guenzer, C.S. (Autor:in) / Wolicki, E.A. (Autor:in) / Allas, R.G. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1979


    Format / Umfang :

    5 Seiten, 4 Bilder, 1 Tabelle, 12 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




    Verification of single event upset rate estimation methods with on-orbit observations (RAMs)

    Shoga, M. / Adams, P. / Chenette, D.L. et al. | Tema Archiv | 1987


    Dynamic Robust Single-Event Upset Simulator

    Carlisle, Edward / George, Alan | AIAA | 2018


    DrSEUs: A dynamic robust single-event upset simulator

    Carlisle, Edward / Wulf, Nicholas / MacKinnon, James et al. | IEEE | 2016


    Single-Event-Upset Studies: A Compilation

    Nichols, D. K. / Price, W. E. / Malone, C. J. et al. | NTRS | 1986


    Empirical Modeling Of Single-Event Upset

    Zoutendyk, John A. / Smith, Lawrence S. / Soli, George A. et al. | NTRS | 1988