The morphology of interface between polysilicon and its thermal oxide is very important for the fabrication of charge-coupled device (CCD) image sensors. Poor quality of polysilicon/oxide interface may lead to leakage current, low charge transfer efficiency, image deficiency, and then reduce the product yield and device reliability. In this paper, the effects polysilicon/oxide interface morphylogy on thermal oxide breakdown characteristics of polysilicon grown by low-pressure chemical vapor deposition (LPCVD) are studied by means of scanning electron microscopy (SEM) and electrical measurement. The breakdown characteristics of the oxide are related to the polysilicon/oxide interface smoothness. As the smoothness of polysilicon/oxide interface becomes worse, the breakdown strength of thermal oxide of the polysilicon decreases. Doping process of polysilicon remarkably affects the smoothness of polysilicon/oxide interface and the breakdown strength of the oxide. Saturated doping of polysilicon improves the polysilicon/oxide interface smoothness, so the breakdown strength of polysilicon may increase.


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    Titel :

    Investigation on the interface of polysilicon/oxide in CCD image sensors


    Beteiligte:
    L., Naiman (Autor:in) / L., Renhao (Autor:in) / L., Chunlin (Autor:in)

    Kongress:

    Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II ; 2014 ; China,China


    Erschienen in:

    Erscheinungsdatum :

    13.04.2015





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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