A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7°C. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.
Dual-wavelength semiconductor laser with 191-nm mode spacing
Novel In-Plane Semiconductor Lasers III ; 2004 ; San Jose,CA,United States
Proc. SPIE ; 5365
2004-05-11
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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