A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7°C. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.


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    Titel :

    Dual-wavelength semiconductor laser with 191-nm mode spacing


    Beteiligte:
    Huang, Chi-Chia (Autor:in) / Lin, Ching-Fuh (Autor:in)

    Kongress:

    Novel In-Plane Semiconductor Lasers III ; 2004 ; San Jose,CA,United States


    Erschienen in:

    Erscheinungsdatum :

    2004-05-11





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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