The effects of irradiations on MOSFET and bipolar junction transistors are well known though irradiation mechanisms in two-dimensional graphene and related devices are still being investigated. In this work, we investigate irradiation mechanism based on a semi-empirical model for the graphene back-gate transistor and quantitatively analyze the irradiation influences on electrical properties of the device structure. The irradiation shifts the current which changes the region of device operation, degrades the mobility and increases the channel resistance which can increase the power dissipation. The main mechanism causing the degradation in performance of devices is the oxide trap charges near the SiO2/graphene interface and graphene layer traps charges.
Irradiation effect on back-gate graphene field-effect transistor
Sensors and Systems for Space Applications X ; 2017 ; Anaheim,California,United States
Proc. SPIE ; 10196
2017-05-05
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Flexible graphene field effect transistor with ferroelectric polymer gate
British Library Online Contents | 2016
|Porous-Floating-Gate Field-Effect Transistor
NTRS | 1990
|JANTX2N4856 field-effect transistor
NTRS | 1980
Mos field-effect-transistor technology
TIBKAT | 1968
|British Library Online Contents | 1996
|