An SOI type pressure sensor has been developed which can measure pressure at high temperature environments above 150°C.SOI stands for Silicon On Insulator. A single-crystalline silicon layer is located on an insulating layer formed on a silicon substrate. The piezoresistors of the SOI type pressure sensor are made from the single-crystalline silicon layer which is isolated from the silicon substrate by the insulating layer. There is no leakage current from the piezoresistors. The SOI structure is made by the laser-recrystallization-method.The properties of the SOI type pressure senor are as good as conventional semiconductor pressure sensors.


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    Titel :

    SOI Type Pressure Sensor for High Temperature Pressure Measurement


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Bessho, Mikio (Autor:in) / Ipposhi, Takashi (Autor:in) / Hase, Yuji (Autor:in)

    Kongress:

    International Congress & Exposition ; 1994



    Erscheinungsdatum :

    01.03.1994




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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