The positioning of InAs quantum dot (QD) layers in a triple‐junction GaInP/Ga(In)As/Ge solar cell is studied using numerical modeling techniques. An effective medium is used to describe the absorption characteristics and carrier dynamics in each QD layer. The effects of incorporating 110 layers in the emitter, base layers, as well as between these regions of the middle sub‐cell are analyzed with current–voltage characteristics and energy band diagrams. The cell with QDs positioned between the emitter and base demonstrated an efficiency of 31% under 1 sun illumination at room temperature. The performance was then increased to 31.3% by optimizing the QD region doping. Copyright © 2014 John Wiley & Sons, Ltd. This short communication highlights the positioning effects of InAs quantum dot layers in the middle sub‐cell of a lattice matched triple‐junction solar cell on device performance under standard testing conditions using numerical modeling techniques. The simulated energy band diagrams of the control and quantum dot cells reveal insight into the reported device performance. Device efficiency is optimized by analyzing the effects of doping concentration in the quantum dot region on the short‐circuit current, open‐circuit voltage, and fill factor.


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    Titel :

    Positioning and doping effects on quantum dot multi‐junction solar cell performance



    Erschienen in:

    Erscheinungsdatum :

    2015




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher