Ballistic-electron-emission microscopy (BEEM) constitutes basis of new spectroscopy of scattering of electrons and holes. Pointed tip electrode scans near surface of metal about 100 angstrom thick on semiconductor. Principle similar to scanning tunneling microscope, except metal acts as third electrode. Used to investigate transport phenomena, scattering phenomena, and creation of hot charge carriers in Au/Si and Au/GaAs metal/semiconductor microstructures.


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    Titel :

    Charge-Carrier-Scattering Spectroscopy With BEEM


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1992-09-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :




    Using BEEM To Probe Strains In Semiconductors

    Bell, L. Douglas / Milliken, Autumn M. / Manion, Stephen J. et al. | NTRS | 1996



    Ballistic-Charge-Carrier Spectroscopy Of CoSi(2)/Si Interfaces

    Hecht, Michael H. / Kaiser, William J. / Fathauer, Robert W. et al. | NTRS | 1993